ZB, 2SJ360, J360, SOT89,
High Speed, High current Switching Applications
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
4-V gate drive
Low drain−source ON resistance : RDS (ON) = 0.55 Ω (typ.)
High forward transfer admittance : |Yfs| = 0.9 S (typ.)
Low leakage current : IDSS = −100 μA (max) (VDS = −60 V)
Enhancement mode : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA),
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
